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| N-CHANNEL 30V - 0.020 - 6A TSSOP8 2.5V-DRIVE STripFETTM II POWER MOSFET TYPE STC6NF30V s s s STC6NF30V VDSS 30 V RDS(on) < 0.025 ( @ 4.5 V ) < 0.030 ( @ 2.5 V ) ID 6A s s TYPICAL RDS(on) = 0.020 @ 4.5 V TYPICAL RDS(on) = 0.025 @ 2.5 V ULTRA LOW THRESHOLD GATE DRIVE (2.5 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY DOUBLE DICE IN COMMON DRAIN CONFIGURATION TSSOP8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY SAFETY UNIT FOR NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Value 30 30 12 6 3.8 24 1.5 Unit V V V A A A W Total Dissipation at TC = 25C Ptot (*) Pulse width limited by safe operating area. February 2003 1/8 STC6NF30V THERMAL DATA Rthj-pcb Rthj-pcb Tj Tstg Thermal Resistance Junction-PCB (**) Thermal Resistance Junction-PCB (*) Operating Junction Temperature Storage temperature Max Max 100 83.5 -55 to 150 -55 to 150 C/W C/W C C (*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t [ 10 sec (**) When Mounted on minimum recommended footprint ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 12 V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 4.5 V VGS = 2.5 V ID = 250 A ID = 3 A ID = 3 A Min. 0.6 0.020 0.025 0.025 0.030 Typ. Max. Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V ID = 6 A Min. Typ. 18 800 180 32 Max. Unit S pF pF pF VDS = 25V f = 1 MHz, VGS = 0 2/8 STC6NF30V ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 3 A VDD = 15 V RG = 4.7 VGS = 2.5 V (Resistive Load, Figure 1) VDD= 15V ID= 6A VGS=2.5V (see test circuit, Figure 2) Min. Typ. 20 25 6.8 2.0 3.4 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 3 A VDD = 15 V RG = 4.7, VGS = 2.5 V (Resistive Load, Figure 1) Min. Typ. 32 13 Max. Unit ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A VGS = 0 25 21 1.7 Test Conditions Min. Typ. Max. 6 24 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 6 A VDD = 15 V Tj = 150C (see test circuit, Figure 3) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area. Thermal Impedance. 3/8 STC6NF30V Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STC6NF30V Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage Temperature Thermal resistance and max power 5/8 STC6NF30V Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STC6NF30V TSSOP8 MECHANICAL DATA DIM. A A1 A2 b c D E E1 e L L1 k 0o 0.45 1.00 8o 0.192 mm. MIN. 1.05 0.05 0.80 0.19 0.090 2.90 6.20 4.30 0.65 0.75 0.018 0.039 0.208 TYP. MAX. 1.20 0.15 1.05 0.30 0.20 3.10 6.60 4.50 MIN. 0.041 0.002 0.032 0.008 0.003 0.114 0.240 0.170 0.025 0.030 inch. TYP. MAX. 0.047 0.006 0.041 0.012 0.007 0.122 0.260 0.177 7/8 STC6NF30V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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